ReRAM (Resistive Random-Access Memory)

ReRAM is a next-generation non-volatile memory technology that offers significant advantages in speed, power efficiency, and endurance. As a cutting-edge alternative to traditional Flash memory, ReRAM is ideal for a wide range of applications, from AI accelerators and edge computing to high-performance IoT devices.

Why Choose ReRAM Technology?

• Non-Volatile: Retains data without power, ensuring data integrity.

• High Speed: Offers ultra-fast read and write access times, outperforming traditional Flash memory.

• Low Power Consumption: Operates at very low power, making it perfect for battery-powered devices.

• High Endurance: Capable of a high number of read/write cycles, ensuring long-term reliability.

• CMOS Compatibility: Easily integrated into existing CMOS fabrication processes.

ReRAM Foundry Services

We provide comprehensive foundry services for ReRAM fabrication, enabling you to bring your innovative designs to life. Our process is optimized for seamless integration, and our team of experts is ready to support your project from design to tape-out.

Whether you're developing innovative IoT devices, AI accelerators, or specialized embedded systems, ReRAM can provide the cutting-edge memory performance your project demands.